Performance Evaluation of GaAs Gate-All-Around FET with Al2O3 Gate Dielectric via Silvaco Atlas Simulation
DOI:
https://doi.org/10.46610/IJESVD.2025.v01i02.004Keywords:
Al₂O₃, DIBL, GaAs, GAAFET, On-off ratio, Silvaco Atlas, Subthreshold slope, TCADAbstract
This work presents a Silvaco TCAD-based investigative analysis of a cylindrical Gate-All-Around Field Effect Transistor (GAAFET), wherein high-mobility GaAs semiconductor and high-κ Al2O3 dielectric are used as the channel and oxide material, respectively. The CGAA structure ensures superb gate control for which undesirable short-channel effects can be suppressed, whereas high-mobility and high-κ dielectric enhance high drive current, both of which thereby improve the FET performance metrics. Since the channel length is only 14 nm, the structure requires quantum confinement of carriers near the oxide/semiconductor interface. To account for this, the modeling incorporated Schrodinger-Poisson self-consistent models and Non-Equilibrium Green’s Function (NEGF) transport models. The simulation explores key electrical parameters such as Subthreshold Slope (SS), threshold voltage (Vt), Drain-Induced Barrier Lowering (DIBL), and on/off current ratio under different drain biases (VDS = 0.03 V and 1.0 V). The structure parameters and material properties were defined as per quantum-scale considerations. The results highlight the strong electrostatic control achieved by the GAA geometry and the potential of Al2O3 as a reliable dielectric for GaAs-based nanoscale FETs.
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