Nanotechnology in Electronics: Advancement in Nanochips, Neural Interface and Quantum Process
Keywords:
Artificial intelligence, Brain–computer interface, Carbon nanotubes, FinFET, GAAFET, Graphene, High-performance computing, Nanochips, Nanoelectronics, Nanotechnology, Neural implants, Quantum processors, Semiconductor miniaturisationAbstract
Nanotechnology is one of the main forces behind modern electronic technologies and has led to the design and manufacture of a large number of highly efficient and compact semiconductor devices with very high performance; the use of nano-scale materials and processes in semiconductor design and manufacture has facilitated the growth of nano-scale devices and led to more than doubling the number of transistors manufactured per chip in current nano-scale devices. The transition from microelectronics to nanoelectronics is a major factor in increasing the number of transistors possible on a given chip and the resulting processing speed and efficiency of those devices. In addition to the amazing advances made in semiconductor technology via the transfer of electronic device manufacturing from the micro- to the nano-scale, new transistor architectures (e.g., FinFET, Gate-all-around, etc.) and new materials (e.g., graphene, carbon nanotubes, etc.) are available to improve the performance, scalability, and reliability of nano-scale electronic devices. Modern nanofabrication methods (e.g., extreme ultraviolet lithography, atomic layer deposition, etc.) will provide the precision required to manufacture next-generation processors at the nanoscale. Nanotechnology also plays an increasingly important role in artificial intelligence, high-performance computing, and advanced communications; nano-electronic devices are now being used for brain-computer interface systems, which will offer many new opportunities for medical diagnostics, neural engineering, and assistive technologies, while creating new ethical, security and safety challenges.
References
M. S. Lundstrom, Fundamentals of Nanotransistors. Singapore: World Scientific Publishing, 2017.
G. E. Moore, “Cramming more components onto integrated circuits," in Proceedings of the IEEE, vol. 86, no. 1, pp. 82–85, Jan. 1998.
T. Skotnicki, J. A. Hutchby, Tsu-Jae King, H.-S. P. Wong and F. Boeuf, “The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance,” in IEEE Circuits and Devices Magazine, vol. 21, no. 1, pp. 16–26, Jan.-Feb. 2005.
C. Auth et al., “A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors,” 2012 Symposium on VLSI Technology (VLSIT), Honolulu, HI, USA, 2012, pp. 131–132.
A. Sinha and N. Choudhary, “Gate-All-Around Transistors at 3nm: Device Physics, Fabrication Challenges, and Beyond FinFET Scaling,” Research Archive of Rising Scholars, Sep. 2025.
S. Borkar, “Design challenges of technology scaling,” in IEEE Micro, vol. 19, no. 4, pp. 23-29, July-Aug. 1999.
Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, 2nd ed. Cambridge University Press, 2007.
J. M. Rabaey, Digital Integrated Circuits: A deep design perspective. Prentice Hall, 1996.
S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ, USA: John Wiley & Sons, 2006.
P. Garrou, C. Bower, and P. Ramm, Handbook of 3D Integration: Volume 1 - Technology and Applications of 3D Integrated Circuits. Wiley, Oct. 2008.
N. P. Jouppi et al., “In-Datacenter performance analysis of a tensor processing unit,” Proceedings of the 44th Annual International Symposium on Computer Architecture – ISCA, Jun. 2017, pp. 1-12.
A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nature Materials, vol. 6, pp. 183–191, Mar. 2007.
K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science, vol. 353, no. 6298, Jul. 2016.
C. Wagner and N. Harned, “Lithography gets extreme,” Nature Photonics, vol. 4, pp. 24–26, Jan. 2010.
S. M. George, “Atomic layer deposition: An overview,” Chemical Reviews, vol. 110, no. 1, pp. 111–131, Nov. 2009.
Taiwan Semiconductor Manufacturing Company Limited, “Advanced packaging.”
P. Avouris, Z. Chen, and V. Perebeinos, “Carbon-based electronics,” Nature Nanotechnology, vol. 2, pp. 605–615, Sep. 2007.
J. L. Hennessy and D. A. Patterson, Computer Architecture: A Quantitative Approach, 6th ed. Elsevier, Nov. 2017.
Swarup Bhunia, S. J. Majerus, and Mohamad Sawan, Implantable biomedical microsystems : design principles and applications. Amsterdam ; Boston: Elsevier/William Andrew, 2015
J. R. Wolpaw and E. W. Wolpaw,ed. Brain-Computer Interfaces: Principles and Practice, Oxford, Jan. 2012.
M. Tehranipoor and C. Wang, Eds., Introduction to Hardware Security and Trust. New York, NY, USA: Springer, 2012.
M. A. Nielsen and I. L. Chuang, Quantum Computation and Quantum Information, 10th anniversary ed. Cambridge, U.K.: Cambridge University Press, 2010.
J. Clarke and F. K. Wilhelm, “Superconducting quantum bits,” Nature, vol. 453, Jun. 2008.
K. Bernstein et al., “High-performance CMOS variability in the 65-nm regime and beyond,” in IBM Journal of Research and Development, vol. 50, no. 4.5, pp. 433–449, Jul. 2006.
