Design and Optimization of a Two-Stage Miller Compensated OTA for Cystic Fibrosis Diagnosis in 45 nm Technology Using Cadence
DOI:
https://doi.org/10.46610/RTSST.2025.v02i02.003Keywords:
Analog front-end (AFE), Cadence, Cystic fibrosis, Operational transconductance amplifier (OTA), StabilityAbstract
This work thoroughly investigates and analyses a two-stage Miller-compensated operational transconductance amplifier (OTA) that can be used in the analog front-end (AFE) block of the sensor interface circuit required for the sweat test analyzer to diagnose a life-threatening genetic disease named cystic fibrosis (CF). In doing so, the OTA has been designed and implemented using 45 nm process technology in the cadence simulation framework. Being an essential component in sensor interface circuits, the OTA has to achieve high gain, good transient and frequency response, as well as improved stability, and hence, its design has to meet several specs such as gain-bandwidth product (GBW), slew rate, phase margin, and power dissipation. However, due to increased short-channel effects, the design of OTA using 45 nm process technology is quite challenging. Therefore, a careful design process has been conducted to reduce these short-channel effects. Detailed AC, transient, and stability analyses have been performed along with tweaking the dimensions (channel length and width), the bias voltages and currents and the Miller-compensated capacitance ensures the optimization of the OTA demanded by its application in pre-amplification stages of the sweat-based CF diagnosis. The results obtained in cadence simulation runs for the proposed OTA show excellent promise to realize an AFE used for CF diagnosis with reduced chip size while maintaining accuracy and performance.
References
A. L. Kabir et al., “Cystic fibrosis diagnosed using indigenously wrapped sweating technique: First large-scale study reporting socio-demographic, clinical, and laboratory features among the children in Bangladesh, a lower middle income country,” Global Pediatric Health, vol. 7, p. 2333794X20967585, Oct. 2020, doi: https://doi.org/10.1177/2333794X20967585
J. S. Elborn, “Cystic fibrosis,” The Lancet, vol. 388, no. 10059, pp. 2519–2531, Nov. 2016, doi: https://doi.org/10.1016/s0140-6736(16)00576-6
J. M. Algueta Miguel, A. J. López-Martín, C. A. De La Cruz Blas, J. Ramírez-Angulo and R. G. Carvajal, “CMOS op-amps for biomedical applications,” 2014 IEEE International Symposium on Circuits and Systems (ISCAS), Melbourne, VIC, Australia, 2014, pp. 1364-1367, doi: https://doi.org/10.1109/ISCAS.2014.6865397
P. K. Goon, M. N. Uddin, M. Islam, A.U. S. Suvro, and M. I. B. Chowdhury, “Automatic industrial garbage collection and segregation robot,” Journal of Control System and Control Instrumentation", vol. 7, no. 1, pp. 13-23, Mar. 2021, Available: https://matjournals.co.in/index.php/JOCSACI/article/view/2748
T. Ahmed, M. J. Islam, M. H. D. Chowdhury, M. R. H. Chowdhury, and M. I. B. Chowdhury, “Design and implementation of a GSM-based home protection system against gas cylinder explosion,” Journal of Electrical Engineering and Electronics Design, vol. 2, no. 2, pp. 12–16, Oct. 2024, doi: https://doi.org/10.48001/joeeed.2024.2212-16
M. M. Hossain et al., “Simulation-driven fabrication and performance evaluation of n-MOSFET using Silvaco Athena and Atlas: From process to parameters,” Journal of Microprocessor and Microcontroller Research, vol. 1, no. 3, pp. 21–43, Nov. 2014, doi: https://doi.org/10.46610/jommr.2024.v01i03.003
M. I. B. Chowdhury and M. M. S. Hassan, “Analytical modeling of base transit time considering recombination in the non-uniformly doped base,” 2011 International Symposium on Humanities, Science & Engineering Research (SHUSER), Kuala Lumpur, Malaysia, pp. 117-122, June 06-07, 2011. doi: https://doi.org/10.1109/shuser.2011.6008482
M. I. B. Chowdhury and M. M. S. Hassan, “Analysis of base transit time for a bipolar junction transistor considering base current,” International Conference on Electrical and Computer Engineering 2010 (ICECE 2010), Dhaka, Bangladesh, pp. 20–24, Dec. 20–24, 2010. doi: https://doi.org/10.1109/ICELCE.2010.5700543
M. I. B. Chowdhury and M. M. S. Hassan, “Base transit time of a bipolar junction transistor considering majority-carrier current,” International Conference on Electrical and Computer Engineering 2008 (ICECE 2008), Dhaka, Bangladesh, pp. 133–138, Dec. 20-22, 2008. doi: https://doi.org/10.1109/ICECE.2008.4769187
S. M. M. Islam et al., “Base transit time of a heterojunction bipolar transistor (HBT) with Gaussian doped base under high-level of injection,” 2012 International Conference on Devices, Circuits, and Systems (ICDCS), Coimbatore, India, 2012, pp. 114-118, doi: https://doi.org/10.1109/ICDCSyst.2012.6188685
S. M. M. Islam et al., Y. Arafat, I. B. Chowdhury, M. Z. R. Khan and M. M. S. Hassan, “Base transit time of a heterojunction bipolar transistor with Gaussian doped base,” International Conference on Electrical & Computer Engineering (ICECE 2010), Dhaka, Bangladesh, 2010, pp. 127-130, doi: https://doi.org/10.1109/ICELCE.2010.5700643
S. M. M. Islam, Y. Arafat, M. Z. R. Khan, and M. I. B. Chowdhury, “Base transit time modeling of Gaussian-doped SiGe HBT considering field-dependence of mobility”, International Journal of Research in Electronics and Computer Engineering (IJRECE), vol. 4, no. 1, pp. 53-59, Mar. 2016, Available: https://nebula.wsimg.com/6a0c2394bab2833379e14281f1f15606?AccessKeyId=DFB1BA3CED7E7997D5B1&disposition=0&alloworigin=1
S. M. M. Islam et al., “Physics-based analysis of the base transit time in Sige-Hbt with Gaussian doped base,” ISTP Journal of Research in Electrical and Electronics Engineering (ISTP-JREEE), Special Issue on 1st International Conference on Research in Science, Engineering & Management (IOCRSEM 2014), 2014, pp. 80-86. Available: https://www.researchgate.net/publication/308765184
A. Haque, A. Rahman, and I. B. Chowdhury, “On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides,” Solid-State Electronics, vol. 44, no. 10, 2000, pp. 1833–1836. doi: https://doi.org/10.1016/S0038-1101(00)00115-5
M. R. Huqe, S. İ. Reba, M. S. Uddin, and M. İ. B. Chowdhury, “Analytical modeling of the base dark saturation current of drift-field solar cells considering auger recombination,” International Journal of Renewable Energy Research, vol. 3, no. 2, pp. 420-426, 2013. Available: https://dergipark.org.tr/en/pub/ijrer/issue/16079/168254
S. K. Saha, A. M. Farhan, S. I. Reba, S. I. Ferdaus and M. I. B. Chowdhury, “An analytical model of dark saturation current of silicon solar cell considering both SRH and Auger recombination,” 2011 IEEE Regional Symposium on Micro and Nano Electronics, Kota Kinabalu, Malaysia, 2011, pp. 9-13, doi: https://doi.org/10.1109/RSM.2011.6088280
S. K. Saha, S. I. Ferdaus, S. I. Reba and M. I. B. Chowdhury, “Effect of field dependent mobility and simultaneous consideration of both SRH and auger recombination on the analytical modeling of internal quantum efficiency of a si-solar cell,” TENCON 2011 - 2011 IEEE Region 10 Conference, Bali, Indonesia, 2011, pp. 662-666, doi: https://doi.org/10.1109/TENCON.2011.6129190
S. K. Saha, S. I. Ferdaus, A. M. Farhan, S. I. Reba and M. I. B. Chowdhury, “Effect of field dependent mobility on the analytical modeling of emitter saturation current of a silicon solar cell,” 2011 IEEE International Conference on Computer Applications and Industrial Electronics (ICCAIE), Penang, Malaysia, 2011, pp. 7-11, doi: https://doi.org/10.1109/ICCAIE.2011.6162094
S. I. Reba et al., “Effect of auger recombination on the emitter saturation current of Si-drift solar cells,” ISTP Journal of Research in Electrical and Electronics Engineering (ISTP-JREEE), Special Issue on 1st International Conference on Research in Science, Engineering & Management (IOCRSEM 2014), pp. 73-79, 2014. Available: https://www.researchgate.net/publication/330117193
M. S. Uddin, M. R. Huqe, and M. I. B.Chowdhury. “Analytical model of the internal quantum efficiency of non-uniformly and heavily doped silicon solar cells including non-ideal effects,” International Conference on Materials, Electronics and Information Engineering (ICMEIE 2015), University of Rajshahi, Bangladesh, Jun.2015, Available: https://www.researchgate.net/publication/330423418
M. R. Huqe and M. I. B. Chowdhury, “Internal quantum efficiency of Si-drift solar cells with nonuniformly and heavily doped emitter,” 2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET), Dhaka, Bangladesh, 2016, pp. 1-4, doi: https://doi.org/10.1109/ICDRET.2016.7421523
M. R. Huqe, H. M. Aziz, K. M. Kolince, M. S. Uddin and M. I. B. Chowdhury, “Effect of Ge-dosing profile of exponentially-doped base on the internal quantum efficiency of a SiGe solar cell,” 2012 International Conference on Devices, Circuits and Systems (ICDCS), Coimbatore, India, 2012, pp. 119-123, doi: https://doi.org/10.1109/ICDCSyst.2012.6188686
M. J. Islam, M. M. Hasan, R. Sami and M. I. B. Chowdhury, “Modeling of graphene/SiO2/Si(n) based metal-insulator-semiconductor solar cells,” 2016 4th International Conference on the Development in the Renewable Energy Technology (ICDRET), Dhaka, Bangladesh, 2016, pp. 1-4, doi: https://doi.org/10.1109/ICDRET.2016.7421491
M. M. Rahman, M. M. Haque, and M. I. B. Chowdhury, “Current-voltage characteristics of hydrogenated a: Si thin film solar cells: An analytical approach,” International Conference on Electrical, Computer and Telecommunication Engineering (ICECTE-2012), Rajshahi, Bangladesh, pp. 5-8, Jan. 21-24, 2013. https://www.researchgate.net/publication/330423383
M. Ali et al. “Current-voltage characteristics of amorphous-Si based plasmonic solar cells with photonic crystal back reflectors,” ISTP Journal of Research in Electrical and Electronics Engineering (ISTP-JRE), Special Issue on 1st International Conference on Research in Science, Engineering & Management (IOCRSEM 2014), pp. 63-66, 2014, Available: https://www.researchgate.net/publication/330117338
M. M. Haque, M. M. Rahman, and M. I. B. Chowdhury, “Current-voltage characteristics of CdS/CdTe thin film solar cells: An analytical approach,” 2014 3rd International Conference on the Developments in Renewable Energy Technology (ICDRET 2014), Dhaka, Bangladesh, pp. 1-4, May 29-31, 2014. doi: http://dx.doi.org/10.1109/ICDRET.2014.6861729
P. Biswas, A. S. Hasan, A. B. Rahim, A. Ullah and I. B. Chowdhury, “Analytical approach of J-V characteristics of CdTe based thin film solar cells including voltage and space-dependent electric field in the absorber layer,” 2015 2nd International Conference on Electrical Information and Communication Technologies (EICT), Khulna, Bangladesh, 2015, pp. 446-450, doi: https://doi.org/10.1109/EICT.2015.7391994
S. A. Rivon, P. Biswas, A. S. Hasan, A. Been Rahim and M. I. B. Chowdhury, “Analytical modelling of Cds/CdTe based thin film solar cells considering surface recombination,” 2016 3rd International Conference on Electrical Engineering and Information Communication Technology (ICEEICT), Dhaka, Bangladesh, 2016, pp. 1-5, doi: https://doi.org/10.1109/CEEICT.2016.7873135
M. M. Romel, H. R. Khan, N. S. Shommo and M. I. B. Chowdhury, “Analytical modeling of internal quantum efficiency of CIGS solar cell,” International Conference on Electrical, Computer and Telecommunication Engineering (ICECTE-2012), Rajshahi, Bangladesh, pp. 9-12, Jan. 21-24, 2013. Available: https://www.researchgate.net/publication/330423311
M. M. Haque, M. M. Rahman, and M. I. B. Chowdhury, “Current-voltage characteristics of CdS/CIGS thin film solar cells: An analytical approach,” 2014 1st International Conference on Non-Conventional Energy (ICONCE 2014), Kalyani, India, 2014, pp. 24-27, doi: https://doi.org/10.1109/ICONCE.2014.6808695
A. B. Rahim, A. S. Hasan, P. Biswas, A. Ullah and M. I. B. Chowdhury, “Analytical modeling of J-V characteristics of CIGS based thin film solar cell considering voltage and space-dependent electric field in the absorber layer,” 2015 International Conference on Advances in Electrical Engineering (ICAEE), Dhaka, Bangladesh, 2015, pp. 368-371, doi: https://doi.org/10.1109/ICAEE.2015.7506871
Ayesha, Kulsum, S. K. Silvi and M. I. B. Chowdhury, “Modeling of J-V characteristics of CZTS based thin film solar cells including voltage and space-dependent electric field in the absorber layer,” 2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET), Dhaka, Bangladesh, 2016, pp. 1-4, doi: https://doi.org/10.1109/ICDRET.2016.7421486
K. N. Nikita, M. A. Gaffar and M. I. B. Chowdhury, “Exploring the opportunity of using graphene as the transparent conducting layer in CZTS-based thin film solar cells,” 2016 3rd International Conference on Electrical Engineering and Information Communication Technology (ICEEICT), Dhaka, Bangladesh, 2016, pp. 1-6, doi: https://doi.org/10.1109/CEEICT.2016.7873130
M. M. Hasan and M. I. B. Chowdhury, “Modelling and analysis of CdS/CZTSSe based thin film solar cell,” Journal of Modeling and Optimization, vol. 10, no. 2, pp. 88-93, Dec. 2018. https://xpublication.com/index.php/jmo/article/view/220
M. J. Islam et al., “Analytical model of cutoff frequency of GAAs PIN photodiode,” Journal of VLSI Design and Signal Processing, vol. 10, no. 2, pp. 31-40, Aug. 2024, Available: https://www.researchgate.net/profile/Muhammad-Islam-24/publication/383395519
S. Quader, A. B. Siddik, N. M. Mahmud Hossain and M. I. Bahar Chowdhury, “Channel engineered cylindrical double gate all around FET for low power VLSI applications,” 2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering (IC4ME2), Rajshahi, Bangladesh, 2018, pp. 1-4, doi: https://doi.org/10.1109/IC4ME2.2018.8465589
N. M. M. Hossain, S. Quader, A. B. Siddik and M. I. B. Chowdhury, “TCAD based performance analysis of junctionless cylindrical double gate all around FET up to 5nm technology node,” 2017 20th International Conference of Computer and Information Technology (ICCIT), Dhaka, Bangladesh, 2017, pp. 1-4, doi: https://doi.org/10.1109/ICCITECHN.2017.8281858
M. I. B. Chowdhury, M. J. Islam, M. M. Hasan, M. J. Islam, and S. U. Farwah, “Silvaco TCAD based analysis of cylindrical Gate -all-around FET having Indium Arsenide as channel and aluminium oxide as gate dielectrics,” Journal of Nanotechnology and its Applications in Engineering, vol. 1, no. 1, pp. 1-12, 2016. https://www.researchgate.net/publication/305462851
M. J. Islam, R. Sami, M. S. Islam and M. I. B. Chowdhury, “Study of characteristics curves top-gated graphene FET using silvaco TCAD,” Journal of Electronic Design Engineering, vol. 3, no. 3, pp. 1-9, 2017. https://doi.org/10.5281/zenodo.15319749
W. H. Chowdhury, Z. A. Sara, M. M. Miah, M. Das and M. I. B. Chowdhury, “Efficiency enhancement of a PCDTBT/PC71 BM-based organic solar cell through layer-thickness optimization,” 2021 2nd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST), Dhaka, Bangladesh, 2021, pp. 684-688, doi: https://doi.org/10.1109/ICREST51555.2021.9331006
S. Mostafa, M. Nadeem, M. I. H. Arif, M. J. Islam and M. I. B. Chowdhury, “Performance optimization of quantum well solar cells through layer thickness variation,” 2020 23rd International Conference on Computer and Information Technology (ICCIT), Dhaka, Bangladesh, 2020, pp. 1-6, doi: https://doi.org/10.1109/ICCIT51783.2020.9392741
M. T. Rahamoni, S. Kabir, M. H. Parvez, S. Islam and M. I. B. Chowdhury, “Towards the portability of a capacitive-sensor based non-invasive glucometer: A simulation approach," 2020 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE), Bhubaneswar, India, 2020, pp. 94-97, doi: https://doi.org/10.1109/WIECON-ECE52138.2020.9398027
A. Islam and M. I. B. Chowdhury, “A simulink-based generalized model of PV cell/array,” 2014 3rd International Conference on the Developments in Renewable Energy Technology (ICDRET), Dhaka, Bangladesh, 2014, pp. 1-5, doi: https://doi.org/10.1109/ICDRET.2014.6861683
A. Islam and M. I. B. Chowdhury, Simulation of two-diode model based PV solar cell/array: A SIMULINK approach,” ISTP Journal of Research in Electrical and Electronics Engineering (ISTP-JREEE), Special Issue on 1st International Conference on Research in Science, Engineering & Management (IOCRSEM 2014), pp. 67-72, 2014. https://www.researchgate.net/publication/330117425
M. I. B. Chowdhury, “Ion-sensitive vertical tunnel field-effect transistor for highly sensitive, low power, low pH-resolution pH Sensing,” in IEEE Sensors Letters, vol. 8, no. 1, pp. 1-4, Jan. 2024, Art no. 1500404, doi: https://doi.org/10.1109/LSENS.2023.3341887
M. Z. A. Emon, K. M. Salim, and M. I. B. Chowdhury, “Design and analysis of a high-gain, low-noise, and low-power analog front end for electrocardiogram acquisition in 45 nm technology using gm/ID method,” Electronics, vol. 13, no. 11, p. 2190, Jun. 2024, doi: https://doi.org/10.3390/electronics13112190
M. Amina et al., “Analysis of common-mode rejection ratio of a CMOS differential amplifier considering all the non-idealities,” 2nd International Conference on Electrical Information and Communication Technologies (EICT), Khulna University of Engineering and Technology, Khulna, Bangladesh, December 10-12, 2015. pp. 234–238. doi: https://doi.org/10.1109/EICT.2015.7391952
S. S. Udupa, P. S. Sushma and Chaithra, “ECG analog front-end in 180 nm CMOS technology,” 2017 International Conference on Intelligent Computing, Instrumentation and Control Technologies (ICICICT), Kerala, India, 2017, pp. 327-330, doi: https://doi.org/10.1109/ICICICT1.2017.8342583
J. Xu, P. Harpe, J. Pettine, C. Van Hoof, and R. F. Yazicioglu, “A low power configurable bio-impedance spectroscopy (BIS) ASIC with simultaneous ECG and respiration recording functionality,” ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC), Graz, Austria, 2015, pp. 396-399, doi: https://doi.org/10.1109/ESSCIRC.2015.7313911
K. S. Singh, P. P. Bansod and R. S. Gamad, “ECG monitoring system using180nm technology,” 2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech), Kolkata, India, 2019, pp. 1-6, doi: https://doi.org/10.1109/IEMENTech48150.2019.8981126