Performance Assessment of InSb/Al2O3 Channel/Oxide-based Cylindrical Gate-All-Around FET Using Silvaco TCAD
DOI:
https://doi.org/10.46610/JOVDSP.2025.v11i03.001Keywords:
Al₂O₃, CGAA FET, DIBL, InSb, On-off ratio, Silvaco Atlas, Subthreshold swing, TCADAbstract
This work presents a Silvaco TCAD-based investigation of an ultra-scaled (channel length of 20 nm) cylindrical gate-all-around FET (CGAA FET), wherein a high-mobility InSb semiconductor and a high-k Al2O3 dielectric are used as the channel and oxide materials, respectively. The CGAA structure provides excellent gate control, thereby suppressing undesirable short-channel effects. On the other hand, high-mobility channels and high-k oxide materials increase drive current, thereby improving performance metrics. The structure parameters and material properties were defined as per quantum-scale considerations. Owing to the scaled channel length, the structure faces quantum confinement of carriers near the oxide/semiconductor interface. Therefore, Schrodinger-Poisson self-consistent models and non-equilibrium green’s function (NEGF) transport models have been employed in the modeling to account for this quantum confinement. The TCAD simulation runs of the proposed CGAA FET result in transfer characteristic curves, from which key performance metrics such as on current (ION), off current (IOFF), on/off ratio (OOR), subthreshold swing (SS), threshold voltage (VTh), and drain-induced barrier lowering (DIBL) under different drain biases (VDS = 0.1 V and 1.0 V) have been extracted. The results demonstrate that stronger electrostatic control has been achieved by the CGAA geometry and also highlight the potential of InSb and Al2O3 as prospective channel and oxide materials for nanoscale FETs.
References
M. Liang, H. Yan, N. Wazir, C. Zhou, and Z. Ma, “Two-dimensional semiconductors for state-of-the-art complementary field-effect transistors and integrated circuits,” Nanomaterials, vol. 14, no. 17, Aug. 2024, doi: https://doi.org/10.3390/nano14171408
M. I. B. Chowdhury and A. Haque, “Accurate determination of gate capacitance in deep submicron MOSFETs using an improved boundary condition,” in International Conference on Electrical and Computer Engineering 2001 (ICECE 2001), Jan. 2001, pp. 175–178. Available: https://www.researchgate.net/publication/330117540_Accurate_determination_of_gate_capacitance_in_deep_submicron_MOSFETs_using_an_im-proved_boundary_condition
M. I. B. Chowdhury, A study of the quantization effects in MOS inversion layer using an improved approach, M.S. thesis, Dept. of Electrical and Electronic Eng., Bangladesh Univ. of Eng. and Technol. (BUET), Dhaka, Bangladesh, Dec. 2000.
A. Haque, A. Rahman, and I. B. Chowdhury, “On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides,” Solid-State Electronics, vol. 44, no. 10, pp. 1833–1836, Oct. 2000, doi: https://doi.org/10.1016/s0038-1101(00)00115-5
M. I. B. Chowdhury, “Ion-sensitive vertical tunnel field-effect transistor for highly sensitive, low power, low pH-resolution pH sensing,” in IEEE Sensors Letters, vol. 8, no. 1, pp. 1–4, Jan. 2024, Art no. 1500404, doi: https://doi.org/10.1109/LSENS.2023.3341887
M. Amina, P. Biswas, A. Ullah and I. B. Chowdhury, “Analysis of common-mode rejection ratio of a CMOS differential amplifier considering all the non-idealities,” 2015 2nd International Conference on Electrical Information and Communication Technologies (EICT), Khulna, Bangladesh, 2015, pp. 234–238, doi: https://doi.org/10.1109/EICT.2015.7391952
K. Seshan, “Limits and hurdles to continued CMOS scaling,” in Handbook of Thin Film Deposition, K. Seshan and D. Schepis, Eds., William Andrew, 2018, pp. 19–81.
M. N. Reddy and D. K. Panda, “A comprehensive review on FinFET in terms of its device structure and performance matrices,” Silicon, vol. 14, pp. 12015–12030, May 2022, doi: https://doi.org/10.1007/s12633-022-01929-8
A. B. Siddik, N. M. M. Hossain, S. Quader and M. I. B. Chowdhury, “Silicon on metal technology merged with cylindrical gate all around FET for enhanced performance,” 2017 3rd International Conference on Electrical Information and Communication Technology (EICT), Khulna, Bangladesh, 2017, pp. 1–4, doi: https://doi.org/10.1109/EICT.2017.8275181
N. M. M. Hossain, S. Quader, A. B. Siddik and M. I. B. Chowdhury, “TCAD based performance analysis of junctionless cylindrical double gate all around FET up to 5nm technology node,” 2017 20th International Conference of Computer and Information Technology (ICCIT), Dhaka, Bangladesh, 2017, pp. 1–4, doi: https://doi.org/10.1109/ICCITECHN.2017.8281858
S. Quader, A. B. Siddik, N. M. Mahmud Hossain and M. I. Bahar Chowdhury, “Channel engineered cylindrical double gate all around FET for low power VLSI applications,” 2018 International Conference on Computer, Communication, Chemical, Material and Electronic Engineering (IC4ME2), Rajshahi, Bangladesh, 2018, pp. 1–4, doi: https://doi.org/10.1109/IC4ME2.2018.8465589
Md. I. B. Chowdhury, M. J. Islam, Md. M. Hasan, Md. J. Islam, and S. U. Farwah, “Silvaco TCAD based analysis of cylindrical gate -all-around FET having indium arsenide as channel and aluminium oxide as gate dielectrics,” Journal of Nanotechnology and its Applications in Engineering, vol. 1, no. 1, pp. 1–12, Jul. 2016, Available: https://www.researchgate.net/
publication/305462851_Silvaco_TCAD_based_Analysis_of_Cylindrical_Gate_-All-Around_
FET_Having_Indium_Arsenide_as_channel_and_Aluminium_Oxide_as_Gate_Dielectrics
Md. J. Islam, Md. M. Hasan, S. U. Farwah, and Md. I. B. Chowdhury, “A novel cylindrical gate all around MOSFET using InAs as channel and HfO2 as gate oxide,” in ISTP Journal of Research in Electrical and Electronics Engineering (ISTP-JREEE) and 1st International Conference on Research in Science, Engineering & Management (IOCRSEM 2014), Aug. 2014, pp. 59–62, Available: https://zenodo.org/records/15318694
P. J. Chakraborty, M. M. Islam, R. Ahamed and M. I. B. Chowdhury, “Sub-20nm GaAs-based cylindrical gate-all-around FETs for improved performance,” 2021 2nd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST), Dhaka, Bangladesh, 2021, pp. 473–477, doi: https://doi.org/10.1109/ICREST51555.2021.9331160
S. Quader, A. B. Siddik, N. M. M. Hossain, M. I. B. Chowdhury, “Germanium silicon based hetero junction cylindrical gate all around field effect transistor for improved performance”, International Journal of Engineering Technology, Management and Applied Science, Vol. 5, Issue 9, pp. 1–6, Sep. 2017, doi: https://doi.org/10.5281/zenodo.15320001
Md. Z. A. Emon, P. C. Paul, N. Mayeen, N. Alam, and Md. I. B. Chowdhury, “Switching power of CNFET based 6-transistor 1-Bit fast adder implemented using cadence,” Advances in Mathematics Scientific Journal, vol. 9, no. 6, pp. 3581–3592, Jul. 2020, Available: https://www.researchgate.net/publication/344447061_Switching_Power_of_CNFET_Based_6-Transistor_1-Bit_Fast_Adder_Implemented_Using_Cadence
M. J. Islam, R. Sami, M. S. Islam, and M. I. B. Chowdhury, “Study of characteristics curves top-gated graphene FET using SILVACO TCAD,” Journal of Electronic Design Engineering, vol. 3, no. 3, pp. 1–9, Oct. 2017, Available: https://www.researchgate.net/publication/320622937_
Study_of_Characteristics_Curves_Top-Gated_Graphene_FET_Using_SILVACO_TCAD
U. H. Disha et al., “Design and optimization of a two-stage miller compensated OTA for cystic fibrosis diagnosis in 45 nm technology using cadence,” Recent Trends in Semiconductor and Sensor Technology, vol. 2, no. 2, pp. 19–33, 2025, Available: https://www.researchgate.net/publication/393554322_Design_and_Optimization_of_a_Two-Stage_Miller_Compensated_OTA_for_Cystic_Fibrosis_Diagnosis_in_45_nm_Technology_Using_Cadence
M. R. Huqe, H. M. Aziz, K. M. Kolince, M. S. Uddin and M. I. B. Chowdhury, “Effect of ge-dosing profile of exponentially-doped base on the internal quantum efficiency of a SiGe solar cell,” 2012 International Conference on Devices, Circuits and Systems (ICDCS), Coimbatore, India, 2012, pp. 119–123, doi: https://doi.org/10.1109/ICDCSyst.2012.6188686
S. A. Rivon, P. Biswas, A. S. Hasan, A. Been Rahim and M. I. B. Chowdhury, “Analytical modelling of Cds/CdTe based thin film solar cells considering surface recombination,” 2016 3rd International Conference on Electrical Engineering and Information Communication Technology (ICEEICT), Dhaka, Bangladesh, 2016, pp. 1–5, doi: https://doi.org/10.1109/CEEICT.2016.7873135
M. R. Huqe and M. I. B. Chowdhury, “Internal quantum efficiency of Si-drift solar cells with nonuniformly and heavily doped emitter,” 2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET), Dhaka, Bangladesh, 2016, pp. 1–4, doi: https://doi.org/10.1109/ICDRET.2016.7421523
M. M. Hasan and M. I. B. Chowdhury, “Modelling and analysis of CdS/CZTSSe based thin film solar cell,” Journal of Modeling and Optimization, vol. 10, no. 2, pp. 88–93, 2018. Available: https://xpublication.com/index.php/jmo/article/view/220
A. Islam and M. I. B. Chowdhury, “A simulink based generalized model of PV cell / array,” 2014 3rd International Conference on the Developments in Renewable Energy Technology (ICDRET), Dhaka, Bangladesh, 2014, pp. 1–5, doi: https://doi.org/10.1109/ICDRET.2014.6861683
A. Islam and M. I. B. Chowdhury, “Simulation of two-diode model based PV solar cell/array: A SIMULINK approach,” ISTP Journal of Research in Electrical and Electronics Engineering (ISTP-JREEE), pp. 67–72, 2014. Available: https://www.researchgate.net/publication/330117425
M. T. Rahamoni, S. Kabir, M. H. Parvez, S. Islam and M. I. B. Chowdhury, “Towards the portability of a capacitive-sensor based non-invasive glucometer: A simulation approach,” 2020 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE), Bhubaneswar, India, 2020, pp. 94–97, doi: https://doi.org/10.1109/WIECON-ECE52138.2020.9398027
Md. Z. A. Emon, K. M. Salim, and Md. I. B. Chowdhury, “A study on source degenerated telescopic OpAmp for biomedical applications,” in Innovations in Electrical and Electronics Engineering, Singapore: Springer, Jan. 2025, pp. 339–353. doi: https://doi.org/10.1007/978-981-97-9037-1_24
M. Z. A. Emon and M. I. B. Chowdhury, “Low threshold voltage MOSFET - A potential candidate for biomedical IC design,” 2024 International Conference on Advances in Computing, Communication, Electrical, and Smart Systems (iCACCESS), Dhaka, Bangladesh, 2024, pp. 1–6, doi: https://doi.org/10.1109/iCACCESS61735.2024.10499508
M. Z. A. Emon, K. M. Salim, and M. I. B. Chowdhury, “Design and analysis of a high-gain, low-noise, and low-power analog front end for electrocardiogram acquisition in 45 nm technology using gm/ID method,” Electronics, vol. 13, no. 11, Jun. 2024, doi: https://doi.org/10.3390/electronics13112190
M. M. Hossain et al., “Simulation-driven fabrication and performance evaluation of n-MOSFET using Silvaco Athena and Atlas: From process to parameters,” Journal of Microprocessor and Microcontroller Research, vol. 1, no. 3, pp. 21–43, 2014, doi: https://doi.org/10.46610/jommr.2024.v01i03.003
W. H. Chowdhury, Z. A. Sara, M. M. Miah, M. Das and M. I. B. Chowdhury, “Efficiency enhancement of a PCDTBT/PC71 BM-based organic solar cell through layer-thickness optimization,” 2021 2nd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST), Dhaka, Bangladesh, 2021, pp. 684–688, doi: https://doi.org/10.1109/ICREST51555.2021.9331006
S. Mostafa, M. Nadeem, M. I. H. Arif, M. J. Islam and M. I. B. Chowdhury, “Performance optimization of quantum well solar cells through layer thickness variation,” 2020 23rd International Conference on Computer and Information Technology (ICCIT), Dhaka, Bangladesh, 2020, pp. 1–6, doi: https://doi.org/10.1109/ICCIT51783.2020.9392741
M. N. Islam, M. R. H. Chowdhury, M. H. D. Chowdhury, M. J. Islam, M. L. Rahaman and M. I. B. Chowdhury, “A high-efficiency dye-sensitized solar cell using PCDTBT:PCBM as solid electrolyte and graphene oxide as hole transport layer,” 2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT), Dhaka, Bangladesh, 2024, pp. 933–938, doi: https://doi.org/10.1109/ICEEICT62016.2024.10534413
Md. N. Islam, Md. H. D. Chowdhury, Md. R. H. Chowdhury, M. J. Islam, and Md. I. B. Chowdhury, “TCAD implementation of a cost-effective, stable, and highly-efficient PCDTBT: PCBM-based organic solar cell,” in Innovations in Electrical and Electronics Engineering, Singapore: Springer Nature, Jan. 2025, pp. 413–427. doi: https://doi.org/10.1007/978-981-97-9037-1_29
SILVACO International, “ATLAS user’s manual: Device simulation software,” SILVACO International, Santa Clara, California, USA, Dec. 2006. Available: http://ridl.cfd.rit.edu/products/manuals/Silvaco/atlas_users.pdf
C.-W. Lee et al., “Performance estimation of junctionless multigate transistors,” Solid-State Electronics, vol. 54, no. 2, pp. 97–103, Feb. 2010, doi: https://doi.org/10.1016/j.sse.2009.12.003
