Assessing IGBT and MOSFET Technologies for Efficient Fault Current Limiting in Grids

Abstract

The integration of renewable energy sources and the increasing load demand have significantly increased the complexity within power systems as they confront the challenges of the electrical grid. This complexity often results in various failures during the distribution of the electrical grid. This heightened complexity usually leads to many failures during electrical power distribution. Limiting fault currents within these systems to ensure their protection enhance reliability, and bolster stability is imperative. Various Fault Current Limiters (FCLs) have been employed to address this issue effectively, swiftly restricting fault currents to prevent system vulnerabilities. Among these, the Superconductor Fault Current Limiter (SFCL) stands out for its compact and highly efficient design in mitigating fault currents and addressing voltage sag arising from system flaws. Although Silicon-Controlled Rectifier (SCR) technology offers reliable fault current restriction, it experiences a slight delay in fault protection activation, requiring milliseconds to engage fully. Conversely, the quick response of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Insulated Gate Bipolar Transistor (IGBT)-based SFCLs ensures swift fault current reduction. Notably, this comprehensive study delves into a technical comparison between MOSFET-based and IGBT-based FCL architectures, with simulation results favoring the quick reaction time of MOSFET-based SFCL in managing fault conditions effectively and efficiently.