Performance Comparison of GaAs/Si3N4 Based Cylindrical Gate-All-Around FETs under sub-20nm Channel Lengths
DOI:
https://doi.org/10.46610/IJDEMT.2026.v02i01.001Keywords:
GAA FET, GaAs channel, High-speed applications, Si3N4 gate oxide, Short channel effectsAbstract
This study explores the potential of gallium arsenide (GaAs) as a channel material and silicon nitride (Si3N4) as the oxide material for cylindrical gate-all-around field-effect transistors (CGAA-FETs) for sub-20 nm channel lengths. The investigated CGAA FET has been designed and implemented in the Silvaco TCAD simulation framework using the ATLAS tool. The modelling of the FET includes quantum effects, non-equilibrium Green’s function formalism, as well as well-known physical models such as Schottky-Read-Hall and Auger recombination, field and concentration dependent mobility models and Fermi statistics for accuracy. Simulations demonstrate that GaAs-based CGAA-FETs can effectively mitigate short-channel effects (SCEs) even at sub-14 nm technology nodes. The superior material properties of GaAs, such as optimised band-gap, higher electron mobility and electron affinity, higher permittivity of Si3N4, and improved gate control of CGAA FET structure, contribute to reducing SCEs and improving the performance. These findings suggest that GaAs-based CGAA-FETs offer a promising solution for developing high-performance, SCE-free transistors for next-generation electronic devices.
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